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1. Articles A constitutive single crystal model for the silicon mechanical behavior : applications to the stress induced by silicided lines and STI in MOS technologies / F. Cacho, S. Orain, G. Cailletaud, H. Jaouen [ [Texte imprimé]]Publication :Paris : ENSMP, 2007Description : P. [161]-167 ; 30 cmAvailability: Copies available for loan: Bib. Paris[EMP 154.778 CCL 5965] (1).
2. Articles A generic method for modeling the behavior of anisotropic metallic materials ; application to recrystallized zirconium alloys / S. Leclercq, G. Rousselier, G. Cailletaud [ [Texte imprimé]]Publication :Paris : ENSMP, 2007Description : P. 458-472 ; 30 cmAvailability: Copies available for loan: Bib. Paris[EMP 154.753 CCL 5964] (1).

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